Polishing pad conditioner and manufacturing method thereof

ABSTRACT

The present invention relates to a polishing pad conditioner and a manufacturing method thereof. The polishing pad conditioner includes a substrate, an abrasive layer and a protective layer. The abrasive layer covers the surface of the substrate. The abrasive layer includes a bonding layer and a plurality of abrasive particles embedded in the bonding layer. Each of the abrasive particles has a protrusion exposed out of the bonding layer, and the protrusion is insulated. The protective layer covers the surface of the bonding layer, and the protrusion is exposed out of the protective layer. The polishing pad conditioner of the present invention can protect the bonding layer from being damaged by abrasion and hold the abrasive particles, avoid the abrasive particles from falling off or out of position, and maintain the polishing effect and service life of the polishing pad conditioner.

BACKGROUND OF THE INVENTION 1. Technical Field

The present invention relates to a polishing pad conditioner and amanufacturing method thereof. The polishing pad conditioner isparticularly used for chemical mechanical polishing (CMP).

2. Description of Related Art

Chemical mechanical polishing (CMP) is a very important process in thesemiconductor manufacturing process. In addition to producing wafers ofappropriate size, CMP can flatten the surface of the wafer to facilitatesubsequent production of integrated circuits. Polishing slurry andpolishing pad are used in CMP. The polishing slurry is corrosive, andthe particles in it can fill the fine grooves of the polishing pad.After these particles are fixed, they provide mechanical friction whenthe polishing pad rotates to polish the wafer so as to reduce theroughness of the wafer surface and achieve a polishing effect.

However, after a period of use, debris and hardened polishing slurrywill accumulate on the surface of the polishing pad and cause “glazing”or hardening, that is, the fine grooves are filled with the hardenedpolishing slurry and cannot hold the particles in the newly filledpolishing slurry, thereby reducing the polishing effect. In addition,when the polishing slurry on the surface of the polishing pad hardens toa certain extent, protrusions will be generated, and the protrusionswill destroy the overall roughness of the wafer surface duringpolishing, resulting in failure to achieve the wafer flattening effect.Therefore, the polishing pad needs to be fixed and dressed with apolishing pad conditioner (also known as a polishing pad adjuster or adiamond disc) to remove surface accumulations and restore the originalworking surface of the polishing pad, thereby extending the service lifeof the polishing pad and reducing replacement cost.

BRIEF SUMMARY OF THE INVENTION

However, the working surface of the polishing pad conditioner used forpolishing carries abrasive particles. After a long time of polishing,the working surface cannot hold the abrasive particles due to wear,causing the abrasive particles to fall off and be out of place. If theshed abrasive particles remain on the polishing pad, the wafer will bescratched, and the off-site abrasive particles will make the polishingpad unevenly trimmed, thereby affecting the CMP process. Therefore, howto protect the surface of the polishing pad conditioner from wear andmaintain the quality of the abrasive particles is a problem to be solvedby the technology of the polishing pad conditioner.

In view of the above problems, the objective of the present invention isto provide a polishing pad conditioner, which includes a substrate, anabrasive layer and a protective layer. The abrasive layer covers thesurface of the substrate. The abrasive layer includes a bonding layerand a plurality of abrasive particles embedded in the bonding layer.Each of the abrasive particles has a protrusion exposed out of thebonding layer, and the protrusion is insulated. The protective layercovers the surface of the bonding layer, and the protrusion is exposedout of the protective layer.

In a preferred embodiment, the protective layer is formed by anelectrodeposition coating composition; wherein the electrodepositioncoating composition includes a main resin, and the main resin is epoxyresin, acrylic resin, polybutadiene resin, polyester resin or polyamideresin.

In a preferred embodiment, the substrate is a metal substrate, a metalalloy substrate, a stainless steel substrate, or a mold steel substrate.

In a preferred embodiment, the bonding layer is made of brazingmaterial, electroplating material, ceramic material, metal material orpolymer material.

In a preferred embodiment, the abrasive particles are at least oneabrasive particles selected from a group consisting of natural diamond,synthetic diamond, polycrystalline diamond, cubic boron nitride,aluminum oxide, and silicon carbide.

In a preferred embodiment, the polishing pad conditioner has a cuttingrate (CR_(completed)). Compared with the cutting rate (CR_(initial)) ofa polishing pad conditioner that has not been covered with a protectivelayer, it conforms to the following formula:

${{\frac{\left( {{C\; R_{initial}} - {C\; R_{completed}}} \right)}{C\; R_{initial}} \times 100\%} < {10\%}},$

that is, the variation rate between the cutting rate (CR_(completed))and the cutting rate (CR_(initial)) of the polishing pad conditionerthat is not covered with the protective layer is less than 10%.

Another objective of the present invention is to provide a method formanufacturing a polishing pad conditioner, the steps of which include:(a) providing a substrate; (b) forming an abrasive layer on the surfaceof the substrate, wherein the abrasive layer includes a bonding layerand a plurality of abrasive particles embedded in the bonding layer, andeach abrasive particle has a protrusion exposed above the bonding layer;(c) subjecting the protrusions to an insulation treatment; and (d)electrodepositing a protective layer on the surface of the bondinglayer, and exposing the insulated protrusions outside the protectivelayer.

In a preferred embodiment, the insulation treatment includes physicalinsulation or chemical insulation.

In a preferred embodiment, the physical insulation includes sandblastinginsulation or plasma insulation.

In a preferred embodiment, the chemical insulation includes etchinginsulation.

In a preferred embodiment, the etching insulation includes etching witha chemical solution, wherein the chemical solution includes at least oneselected from a group consisting of nitric acid, aqua regia,hydrofluoric acid, sulfuric acid, hydrogen peroxide, perchloric acid,hydrochloric acid, ferric chloride, acetic acid, and ammonium ceriumnitrate.

In a preferred embodiment, the bonding layer is formed by anelectroplating method or a brazing method.

Compared with the prior art, the polishing pad conditioner of thepresent invention has a protective layer and protrusions of abrasiveparticles exposed outside the protective layer. The protective layer canprevent the metal (e.g., nickel) of the bonding layer from beingprecipitated during the CMP process to prevent contamination, and canprotect the bonding layer from abrasion damage and hold the abrasiveparticles to prevent the abrasive particles from falling off or beingout of place. And because the protrusions of the abrasive particles areexposed outside the protective layer, the polishing effect and lifetimeof the polishing pad conditioner can be maintained. In addition, in themanufacturing method of the polishing pad conditioner of the presentinvention, the protrusions of the abrasive particles are insulatedbefore the protective layer is electrodeposited so that the protectivelayer will not cover the protrusions during electrodeposition, and thecutting rate of the polishing pad conditioner can be maintained.Moreover, the protective layer formed by electrodeposition has theadvantages of thin thickness and uniform distribution, which can notonly protect the bonding layer, but also adjust and maintain the heightof the protrusions as needed.

BRIEF DESCRIPTION OF THE FIGURE

FIG. 1 shows the polishing pad conditioner of the present invention.

FIG. 2 shows the manufacturing method of the polishing pad conditionerof the comparative example.

FIG. 3 shows the manufacturing method of the polishing pad conditionerof the present invention.

FIG. 4 shows a scanning electron microscope (SEM) photograph of thesurface of the abrasive layer of the polishing pad conditioner of theExample and that of the Comparative Example 1, wherein (a) is thesurface of the abrasive layer of the polishing pad conditioner of theComparative Example 1, and (b) is the surface of the abrasive layer ofthe polishing pad conditioner of the Example.

DETAILED DESCRIPTION OF THE INVENTION

The following example should not be regarded as excessively limiting thepresent invention. Those with ordinary knowledge in the technical fieldof the invention can make modifications and changes to the examplediscussed herein without departing from the spirit or scope of theinvention, and such modifications and changes still fall within thescope of the invention.

The terms “a” and “an” refer to one or to more than one (i.e., to atleast one) of the grammatical object of the article.

As shown in FIG. 1, the polishing pad conditioner of the presentinvention includes a substrate 1, an abrasive layer 2 and a protectivelayer 3. The abrasive layer 2 covers the surface of the substrate 1. Theabrasive layer 2 includes a bonding layer 21 and a plurality of abrasiveparticles 22 embedded in the bonding layer 21. Each of the abrasiveparticles 22 has a protrusion 221 exposed out of the bonding layer 21,and the protrusion 221 has been subjected to an insulation treatment.The protective layer 3 covers the surface of the bonding layer 21, andthe protrusion 221 is exposed outside the protective layer 3.

FIG. 2 provides a method for manufacturing a polishing pad conditionerof a comparative example. After the abrasive particles 22 are embeddedin the bonding layer 21, a protective layer 3 is coated on the surfacesof the abrasive particles 22 and the bonding layer 21. However, theinventor found after many experiments that when manufacturing apolishing pad conditioner, no matter what bonding method (such asbrazing, electroplating/electrodeposition or sintering) is used to inlayand fix the abrasive particles 22 on the bonding layer 21, since thebrazing, electroplating or sintering material remains on the abrasiveparticles 22, the abrasive particles 22 will become conductive afterbeing fixed on the bonding layer 21. Therefore, when the protectivelayer 3 is covered on the bonding layer 21 by coating orelectrodeposition in the next step, the abrasive particles 22 arecovered by the protective layer 3 due to their conductivity and cannotbe exposed outside the protective layer 3. Compared with the polishingpad conditioner without the protective layer 3, the cutting rate of thepolishing pad conditioner with the protective layer 3 is reduced becausethe abrasive particles 22 are covered by the protective layer 3, therebyreducing the overall cutting rate of the polishing pad conditioner.Moreover, the protective layer 3 covering the abrasive particles 22 iseasy to peel off during the polishing pad conditioner dressing thepolishing pad, causing impurities to fall on the polishing pad, whichaffects the polishing quality.

Different from the manufacturing method of the polishing pad conditionerof the comparative example, the manufacturing method of the polishingpad conditioner of the present invention is shown in FIG. 3, and thesteps include: (a) providing a substrate 1; (b) forming an abrasivelayer 2 on the surface of the substrate 1, wherein the abrasive layer 2includes a bonding layer 21 and a plurality of abrasive particles 22embedded in the bonding layer 21, and each of the abrasive particles 22has a protrusion 221 exposed above the bonding layer 21; (c) performingan insulation treatment on the protrusion 221 (the insulation treatmentshown in FIG. 4 takes plasma as an example, and the plasma nozzle 4 isused to spray the protrusion 221 for insulation treatment, but theinsulation treatment of the invention is not limited to the use ofplasma); and (d) electrodepositing a protective layer 3 on the surfaceof the bonding layer 21, and the protrusion 221 after insulationtreatment is exposed outside the protective layer 3. Since theprotrusion 221 is insulated in step (c), its surface has been completelyinsulated. When the protective layer 3 is subsequently electrodepositedin step (d), since electrodeposition transfers the charged resinparticles in the solution to the surface of the oppositely chargedelectrode under the action of an electric field, and the surface of theprotrusion 221 is insulated, the protective layer 3 cannot be formed onthe surface of the protrusion 221. As a result, the protrusion 221 willbe exposed outside the protective layer 3, so that the abrasiveparticles 22 can maintain the original cutting rate, and the protectivelayer 3 will not be peeled off during polishing to generate impurities.Moreover, since the protective layer 3 covers the bonding layer 21, thebonding layer 21 can be protected from being damaged by friction duringpolishing, so that the bonding layer 21 can firmly hold the abrasiveparticles 221 and prevent the abrasive particles 221 from falling off orbeing out of place. In addition, the polishing slurry in CMP is usuallycorrosive, such as an acid etching solution, while the protective layer3 can protect the bonding layer 21 from being corroded by the etchingsolution to precipitate metals (such as nickel) and preventcontamination.

After testing, the polishing pad conditioner of the present inventionhas a cutting rate (CR_(completed)). Compared with the cutting rate(CR_(initial)) of a polishing pad conditioner that is not covered withthe protective layer 3 (i.e., the bonding layer 21 is not covered withthe protective layer 3), the variation rate of the cutting rate conformsto the following formula:

${{\frac{\left( {{C\; R_{initial}} - {C\; R_{completed}}} \right)}{C\; R_{initial}} \times 100\%} < {10\%}},$

that is, the variation rate between the cutting rate (CR_(completed))and the cutting rate (CR_(initial)) of the polishing pad conditionerthat is not covered with a protective layer is less than 10%. In thepolishing pad conditioner manufactured by the manufacturing method ofthe polishing pad conditioner of the present invention,electrodepositing the protective layer 3 on the bonding layer 21 haslittle effect on the cutting rate of the polishing pad conditioner. Thecutting rate of the polishing pad conditioner of the invention is 300μm/hr or more, preferably 320 μm/hr or more, and more preferably 330μm/hr or more. The above-mentioned cutting rate is merely exemplary andnot restrictive. Those with ordinary knowledge in the field of theinvention can adjust according to requirements to obtain the requiredcutting rate of the polishing pad conditioner.

The materials and manufacturing methods that can be used to constructthe polishing pad conditioner of the present invention will be describedbelow. It should be noted that the materials and techniques disclosedherein are only exemplary, and other materials and techniques notmentioned can be used without departing from the scope of the invention.

In the polishing pad conditioner of the present invention, the substrate1 is composed of one or more of stainless steel, metal material, plasticmaterial, and ceramic material. In fact, as long as the substrate 1 cansupport the abrasive layer 2. The preferred material can be a metalsubstrate, a metal alloy substrate, a stainless steel substrate or amold steel substrate. Specifically, the metal substrate includes, but isnot limited to, copper, iron, aluminum, titanium, or tin; and the metalalloy substrate includes, but is not limited to, iron alloy, copperalloy, aluminum alloy, titanium alloy, or magnesium alloy.

In the polishing pad conditioner of the present invention, the bondinglayer 21 is the interlayer used to carry the abrasive particles 22 andis attached to the substrate 1, and the abrasive particles 22 are mainlyembedded and fixed on the bonding layer 21. The bonding layer 21 can beformed by various different methods, such as resin organic bonding,electroplating, brazing and electrodeposition. The material of thebonding layer 21 includes brazing material, electroplating material,ceramic material, metal material or polymer material, and the inventionis not limited to these. Specifically, the brazing material,electroplating material or metal material includes at least one selectedfrom the group consisting of iron, cobalt, nickel, chromium, manganese,silicon, aluminum, and combinations thereof. The polymer materialincludes epoxy resin, polyester resin, polyacrylic resin or phenolresin. The ceramic material includes various metal oxides, nitrides,carbides, borides, silicides, or combinations thereof, such as siliconcarbide, silicon nitride, aluminum nitride, aluminum oxide, titaniumcarbide, titanium boride, or boron carbide.

In the polishing pad conditioner of the present invention, the abrasiveparticles 22 are at least one abrasive particles 22 selected from agroup consisting of natural diamond, synthetic diamond, polycrystallinediamond, cubic boron nitride, aluminum oxide, and silicon carbide. The“protrusion 221 of the abrasive particle 22” referred to herein is thepart of the upper end of the abrasive particle 22 that is not covered bythe protective layer 3, and its shape can be, but is not limited to, apyramid shape, a cone shape, a circular arc shape, a cylinder shape, aknife edge shape, or a prism shape.

Herein, “the insulation treatment of the protrusion 221” means that whenthe abrasive particles 22 are inlaid and fixed on the bonding layer 21through the bonding process, the protrusion 221 of the abrasive particle22 is made conductive due to the brazing, electroplating or sinteringmaterial remaining on the protrusion 221 during the bonding process, andtherefore the insulation treatment is further applied to the protrusion221 after the bonding process. The insulation treatment includesphysical insulation or chemical insulation. The physical insulationincludes sandblasting insulation or plasma insulation, and the principleis to use sandblasting or plasma to remove the conductive material onthe protrusion 221 to make it non-conductive. The particle size of thesandblasting particles used in the sandblasting insulation is about50-200 μm. The temperature used in the plasma insulation is about150-350° C. The chemical insulation includes insulation by an etchingmethod, which uses a chemical solution to etch and remove the conductivematerial on the protrusion 221. The chemical solution includes, but isnot limited to, nitric acid, aqua regia, hydrofluoric acid, sulfuricacid, hydrogen peroxide, perchloric acid, hydrochloric acid, ferricchloride, acetic acid, ammonium cerium nitrate, potassium chloride,potassium iodide, ammonium persulfate, ammonium chloride, or acombination thereof. The chemical solution preferably contains at leastone selected from the group consisting of nitric acid, aqua regia,hydrofluoric acid, sulfuric acid, hydrogen peroxide, perchloric acid,hydrochloric acid, ferric chloride, acetic acid, and ammonium ceriumnitrate. After the above-mentioned insulation treatment, the surface ofthe protrusion 221 is insulated and not charged, and the protectivelayer 3 cannot be electrodeposited on the surface of the protrusion 221subsequently, so the protrusion 221 can be exposed outside theprotective layer 3.

In the polishing pad conditioner of the present invention, theprotective layer 3 is preferably formed of an electrodeposition coatingcomposition. Electrodeposition is a kind of surface treatment in whichthe polishing pad conditioner is immersed in the electrodepositioncoating composition, and the abrasive layer 2 is placed between theelectrodes and provided with current, so that the electrodepositioncoating composition is deposited on the surface of the bonding layer 21by electrical action to form a uniform protective layer 3. Althoughother surface treatment methods (such as spray coating or spin coating)can also be used, the use of electrodeposition coating can obtain auniform and thin protective layer 3. The protective layer 3 with a thinthickness can help maintain a considerable height distance between theabrasive particles 22 and the protective layer 3 and the cutting rate ofthe abrasive particles 22. The thickness of the protective layer 3 maypreferably be, but is not limited to, 10-30 μm, and the thicknessdifference of each position is preferably controlled to be 1.0-3.0 μm,and more preferably 1.5 μm. The electrodeposition coating compositionincludes a main resin, and the main resin is epoxy resin, acrylic resin,polybutadiene resin, polyester resin or polyamide resin, specifically,amine modified epoxy resin (e.g., modified epoxy resin containingdiethyltriamine), acrylic resin containing carboxyl and hydroxyl groups,or epoxidized polybutadiene resin, and the invention is not limited tothese.

EXAMPLE

The following example provides a manufacturing method of the polishingpad conditioner of the present invention. It should be understood thatthe example is for illustration only and is not intended to limit theinvention.

Example—Polishing Pad Conditioner of the Present Invention in which theProtrusions are Insulated

Molten nickel-chromium alloy and diamond particles were used to form anabrasive layer on the surface of a stainless steel. The moltennickel-chromium alloy was coated on part of the oblique side of eachdiamond particle by surface tension to embed, support, and fix thediamond particle on the surface of a stainless steel. Plasma insulationtreatment was applied to the protrusion of each diamond particle toinsulate the surface of the protrusion. Finally, an epoxy resin (PPGIndustries Inc.) was electrodeposited on the surface of the bondinglayer to form a protective layer to obtain the polishing pad conditionerof the present invention.

Comparative Example 1—Polishing Pad Conditioner with UninsulatedProtrusions

The manufacturing method of the polishing pad conditioner of ComparativeExample 1 was the same as that of the Example, except that theprotrusion of each diamond particle in Comparative Example 1 was notinsulated.

Test 1—Cutting Rate

The cutting rate of the polishing pad conditioner of the Example andthat of Comparative Example 1 were tested respectively, and thevariation rate of cutting rate is calculated by the following formula:

${\frac{\left( {{C\; R_{initial}} - {C\; R_{completed}}} \right)}{C\; R_{initial}} \times 100\%};$

and the results are shown in Table 1.

TABLE 1 Cutting rate when not Cutting rate when covered Variationcovered with protective with protective layer rate of layer(CR_(initial), μm/hr) (CR_(completed), μm/hr) cutting rate Example 325321 1.23% Comparative 318 202 36.48% Example 1

As shown in Table 1, after the bonding layer of the polishing padconditioner of the Example was covered by the protective layer, thevariation rate of the cutting rate was less than 10%, which means thatthe cutting rate of the polishing pad conditioner of the Example wouldnot decrease even if it was covered by the protective layer. Incontrast, after the abrasive layer of the polishing pad conditioner ofComparative Example 1 was covered by the protective layer, the variationrate of the cutting rate was greater than 10%, which decreased from 318μm/hr to 202 μm/hr. The difference between the Example and theComparative Example 1 lies in whether the protective layer covered theprotrusions of the diamond particles. It can be seen from ComparativeExample 1 that when the protective layer covers the protrusions, thecutting rate of the polishing pad conditioner is greatly reduced.

Test 2—Photographed the Surface of the Abrasive Layer of the PolishingPad Conditioner by Scanning Electron Microscope (SEM)

A scanning electron microscope (SEM) was used to photograph the surfaceof the abrasive layer of the polishing pad conditioner of the Exampleand that of Comparative Example 1, and the results are shown in FIG. 4.FIG. 4(a) is the surface of the abrasive layer of the polishing padconditioner of Comparative Example 1, and FIG. 4(b) is the surface ofthe abrasive layer of the polishing pad conditioner of the Example. Asshown in FIG. 4(b), the protrusions of the abrasive particles of thepolishing pad conditioner of the Example are insulated, and theprotective layer cannot be electrodeposited on the surface, thus forminga sharper cutting surface. In contrast, as shown in FIG. 4(a), theprotrusions of the abrasive particles of the polishing pad conditionerof Comparative Example 1 are not insulated, and the protective layer iselectrodeposited on the surface, thus forming a rounder but not sharpcutting surface.

Comparative Example 2—Polishing Pad Conditioner without Protective Layer

Molten nickel-chromium alloy and diamond particles were used to form anabrasive layer on the surface of a stainless steel. The moltennickel-chromium alloy was coated on part of the oblique side of eachdiamond particle by surface tension so as to embed, support and fix thediamond particle to obtain a polishing pad conditioner without aprotective layer.

Test 3—Comparison of Metal Precipitation

The polishing pad conditioner of the Example and that of ComparativeExample 2 were soaked in 3% nitric acid solution, respectively. After 24hours, the amount of metal in the 3% nitric acid solution after soakingwas tested, and the results are shown in Table 2.

TABLE 2 Cr Fe Ni Co (ppb) (ppb) (ppb) (ppb) 3% HNO₃ 16 90 4 n.d Example39 117 18 3 Comparative 147,071 176,703 334,063 885 Example 2

As shown in Table 2, 3% nitric acid solution originally contained lowconcentrations of chromium, iron, nickel and cobalt. After the polishingpad conditioner of the Example was soaked, although chromium, iron,nickel, and cobalt were precipitated, the concentrations were not high.In contrast, the polishing pad conditioner of Comparative Example 2 hadvery high precipitation concentrations of chromium, iron, nickel, andcobalt because there was no protective layer.

According to the above Example, the polishing pad conditionermanufactured by insulating the protrusions has no protective layercovering the protrusions of diamond particles, so the cutting rate canbe maintained without reducing the polishing effect, and the polishingability of the polishing pad conditioner is maintained. In addition,when the bonding layer of the polishing pad conditioner is covered witha protective layer, the metal of the bonding layer can be protected fromprecipitation.

In summary, the polishing pad conditioner of the present invention has aprotective layer, which can prevent the metal (e.g., nickel) of thebonding layer from being precipitated during the CMP process to preventcontamination, and protect the bonding layer from being damaged byabrasion and hold the abrasive particles, prevent the abrasive particlesfrom falling off or out of position, and prevent the protective layerfrom peeling off during polishing pad conditioner dressing the polishingpad and causing impurities to fall on the polishing pad, therebymaintaining the polishing effect and prolonging the service life. Inaddition, the manufacturing method of the polishing pad conditioner ofthe present invention uses insulation treatment and electrodeposition.The insulation treatment can insulate the protrusions of the abrasiveparticles so that the protective layer will not cover the protrusionsduring subsequent electrodeposition. The protective layer formed byelectrodeposition has the advantages of thin thickness and uniformdistribution, so that the height of the protrusion can be maintained,i.e., the cutting rate of the polishing pad conditioner can bemaintained. Therefore, the polishing pad conditioner of the invention issuitable for CMP and has industrial applicability.

The above is the detailed description of the present invention. However,the above is merely the preferred Example of the invention and cannot bethe limitation to the implement scope of the invention, which means thevariation and modification according to the present invention may stillfall into the scope of the invention.

What is claimed is:
 1. A polishing pad conditioner, comprising: asubstrate; an abrasive layer covering a surface of the substrate,wherein the abrasive layer includes a bonding layer and a plurality ofabrasive particles embedded in the bonding layer, each of the abrasiveparticles has a protrusion exposed out of the bonding layer, and theprotrusion is insulated; and a protective layer covering a surface ofthe bonding layer, wherein the protrusion is exposed outside theprotective layer.
 2. The polishing pad conditioner of claim 1, whereinthe protective layer is formed by an electrodeposition coatingcomposition; wherein the electrodeposition coating composition includesa main resin, and the main resin is epoxy resin, acrylic resin,polybutadiene resin, polyester resin or polyamide resin.
 3. Thepolishing pad conditioner of claim 1, wherein the substrate is a metalsubstrate, a metal alloy substrate, a stainless steel substrate, or amold steel substrate.
 4. The polishing pad conditioner of claim 1,wherein the bonding layer is made of brazing material, electroplatingmaterial, ceramic material, metal material or polymer material.
 5. Thepolishing pad conditioner of claim 1, wherein the abrasive particles areat least one abrasive particles selected from a group consisting ofnatural diamond, synthetic diamond, polycrystalline diamond, cubic boronnitride, aluminum oxide, and silicon carbide.
 6. The polishing padconditioner of claim 1, which has a cutting rate (CR_(completed)),wherein the variation rate between the cutting rate (CR_(completed)) andthe cutting rate (CR_(initial)) of a polishing pad conditioner that isnot covered with a protective layer is less than 10%.
 7. A method formanufacturing a polishing pad conditioner, the steps of which include:(a) providing a substrate; (b) forming an abrasive layer on a surface ofthe substrate, wherein the abrasive layer includes a bonding layer and aplurality of abrasive particles embedded in the bonding layer, and eachabrasive particle has a protrusion exposed above the bonding layer; (c)subjecting the protrusions to an insulation treatment; and (d)electrodepositing a protective layer on a surface of the bonding layer,and exposing the insulated protrusions outside the protective layer. 8.The method of claim 7, wherein the insulation treatment includesphysical insulation or chemical insulation.
 9. The method of claim 8,wherein the physical insulation includes sandblasting insulation orplasma insulation.
 10. The method of claim 8, wherein the chemicalinsulation includes etching insulation.
 11. The method of claim 10,wherein the etching insulation includes etching with a chemicalsolution, wherein the chemical solution includes at least one selectedfrom a group consisting of nitric acid, aqua regia, hydrofluoric acid,sulfuric acid, hydrogen peroxide, perchloric acid, hydrochloric acid,ferric chloride, acetic acid, and ammonium cerium nitrate.
 12. Themethod of claim 7, wherein the bonding layer is formed by anelectroplating method or a brazing method.